8
RF Device Data
Freescale Semiconductor
MRF7S21150HR3 MRF7S21150HSR3
TYPICAL CHARACTERISTICS
Figure 12. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
G
ps
, POWER GAIN (dB)
0 200100
16
15
17
18
28 V
IDQ
= 1350 mA
f = 2140 MHz
300
VDD
= 24 V
14
32 V
250
108
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at VDD
= 28 Vdc, P
out
= 44 W Avg., and
ηD
= 31%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
105
110 130 150 170 190
MTTF (HOURS)
210 230
W-CDMA TEST SIGNAL
246810
0.0001
100
0
PEAK?TO?AVERAGE (dB)
Figure 14. CCDF W-CDMA IQ Magnitude Clipping,
Single-Carrier Test Signal
10
1
0.1
0.01
0.001
PROBABILITY (%)
W?CDMA. ACPR Measured in 3.84 MHz
Channel Bandwidth @ 5 MHz Offset.
Input Signal PAR = 7.5 dB @ 0.01%
Probability on CCDF
Input Signal
?60
?110
?10
(dB)
?20
?30
?40
?50
?70
?80
?90
?100
3.84 MHz
Channel BW
7.2
1.8 5.43.6
0
?7.2
?5.4
?3.6
?1.8
?9
9
f, FREQUENCY (MHz)
Figure 15. Single-Carrier W-CDMA Spectrum
?ACPR in 3.84 MHz
Integrated BW
?ACPR in 3.84 MHz
Integrated BW
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